| No. of posts | One (1) |
| Desired qualification | M.Sc first class in Chemistry / Material Science / Nanotechnology from any recognized university; NET/GATE qualified candidates with Physical Chemistry specialization will be given preference but it is not mandatory; good command in English language and computer awareness are desired. |
| Monthly emoluments | For NET qualified: Rs.16000/- pm plus HRA. For Non NET/GATE candidate: Rs. 14000 pm plus HRA. |
| Nature of work |
Candidate will be working on the electrochemical
synthesis and characterization of Si/Ge thin films from ionic liquid
bath at elevated temperatures. Thus the candidate will have the
opportunity to learn wet chemistry, solid state and surface chemistry as
well as state-of-the-art analytical techniques like Transmission
Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Electron
diffraction, IR and Raman Spectroscopy. The candidate will also have
the opportunity to model the nucleation and growth process involved in
the fabrication of thin film Si/Ge over suitable substrates. The Si
thin film so obtained may also be utilized for the fabrication of
photovoltaic device. Electrical and electronic properties of the
resulting films will also be carried out during this project tenure.
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Sarva Shiksha Abhiyan
Railway Recruitment Board (RRB)Railway Recruitment Board (RRB)